Photonic ge-based platforms for mid-infrared applications

¹ Univ. Grenoble Alpes, CEA, LETI, 38054 Grenoble, France
² Bridgewater State University, Physics Department, 131 Summer St., Bridgewater, MA 02324, USA
³ Materials Research Laboratory and Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
⁴ INL, Institut des Nanotechnologies de Lyon, Lyon, France

^* vincent.reboud@cea.fr

Abstract

Silicon photonics, initially developed for data communications in the near infrared (NIR), has been extended over the last ten years to the mid-infrared (MIR) region. Efforts have been made to fully integrate MIR functions at chip level on Ge and Si planar substrates, to achieve greater reliability and higher performance at lower cost. The fields of application are vast, ranging from IR imaging of biological tissues to environmental monitoring, control of industrial processes, security and many more.