Narrow band gap nanocrystals for infrared cost-effective optoelectronics

Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France

^* e-mail : el@insp.upmc.fr

Abstract

Infrared optoelectronics is driven by epitaxially grown semiconductors and the introduction of alternative materials is often viewed with some suspicion until the newcomer has demonstrated a high degree of viability. Infrared nanocrystals have certainly reached this degree of maturity switching from the demonstration of absorption by chemists to their integration into increasingly complex systems. Here, we review some of the recent developments relative to the integration of nanocrystal devices in the 1-5 µm range.